Subcommittees

 

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Epitaxy and Semicondutor Processing


Amy Liu, IQE, USA, Subcommittee chair

Tim Stadelmann, Fraunhofer IAF Germany

Dae-Hyun Kim, Kyungpook National University, South Korea

Chris Palmstrom, UC Santa Barbara, USA

Keisuke Shinohara, Teledyne, USA

Markus Weyers, TU Berlin / Ferdinand-Braun-Institut, Germany

 

 

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Novel Materials & Characterization


Holger Eisele, Technische Universität Berlin, Germany Subcommittee chair

Frank Bertram, Otto-von-Guericke Universität, Germany

Raffaela Calarco, Paul-Drude-Institut, Germany

Randall Feenstra, Carnegie Mellon University, USA

Shiro Tsukamoto, National College of Technology, Japan

 

 

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High Frequency Devices


Nils Weimann, Ferdinand-Braun-Institut, Germany, Subcommittee chair

Markus Rösch, Fraunhofer IAF, Germany

Miguel Urteaga, Teledyne, USA

Tetsuya Suemitsu, Tohoku University, Japan

Gerry Mei, Northrop Grumman, USA

Martin Dvorak, Keysight, USA

 

 

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Semiconductor Lasers


Johann Peter Reithmaier, Universität Kassel, Germany Subcommittee chair

Hideki Yagi, Sumitomo Electric Device Innovation, Japan

Michel Krakowski, III-V Labs/ Palaiseau, France

Martin Möhrle, Fraunhofer HHI, Germany

Anders Larsson, Chalmers University, Sweden

Alexey Belyanin, Texas A&M University, USA

Markus-Christian Amann, Technische Universität München, Germany

 

 

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Physics, Spintronics and Novel Device Concepts


Thomas Schäpers, Forschungszentrum Jülich, Germany, Subcommittee chair

Hartmut Buhmann, Universität Würzburg, Germany

Junsaku Nitta, Tohoku University, Japan

Stefan Ludwig, Paul-Drude-Institut, Germany

Sergey Frolov, University of Pittsburgh, USA

Marc Wilde, Technische Universität München, Germany

 

 

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Nanostructures


Erik Bakkers, Eindhoven University of Technology, Netherlands, Subcommittee chair

Magnus Borgstrom, Lund University, Schweden

Emanuele Peluchi, University College Cork, Ireland

Lutz Geelhaar, Paul-Drude-Institut, Germany

Dan Dalacu, University of Waterloo, Canada

Junicho Motohisa, Hokkaido University, Japan

 

 

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Power Electronics


Tomas Palacios, MIT - Massachusetts Institute of Technology, USA, Subcommittee chair

Rüdiger Quay, Fraunhofer IAF, Germany

Elison Matioli, EPFL, Switzerland

Kevin Chen, Hong Kong University of Science and Technology, China

Masataka Higashiwaki, NICT, Japan

Sameer Pendharkar, Texas Instruments, USA

 

 

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Nanocarbon and 2D Materials


Marcelo Lopes, Paul-Drude-Institut, Germany, Subcommittee chair

Gavin Bell, Warwick University, UK

Grzegorz Lupina, IHP Microelectronics, Germany

René Hoffmann, Fraunhofer IAF, Germany

Satoru Tanaka, Kyushu University, Japan

 

 

 

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Optoelectronics: Devices and Integration


Meint Smit, Technische Universiteit Eindhoven, Netherlands, Subcommittee chair

Norbert Grote, Fraunhofer HHI, Germany

Mohand Achouche, III-V Lab, France

Mike Wale, Oclaro, Switzerland

Arne Leinse, LioniX, Netherlands

 

 

 

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Organic Semiconductors and Flexible Electronics


Wolfgang Kowalsky, Technische Universität Braunschweig, Germany, Subcommittee chair

Dieter Neher, Universität Potsdam, Germany

Uli Lemmer, KIT Karlsruhe, Germany

Wolfgang Brütting, Universität Augsburg, Germany

Thomas Riedl, Bergische Universität Wuppertal, Germany

Ullrich Scherf, Bergische Universität Wuppertal, Germany

 

 

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Wide Bandgap Materials and Oxide Semiconductors


Jim Speck, UCSB, Netherlands, Subcommittee chair

Jun Suda, Kyoto University, Japan

Armin Dadgar, Universität Magdeburg, Germany

Eva Monroy, CEA, France

Czeslaw Skierbiszewski, UNIPRESS, Poland

Oliver Bierwagen, Paul-Drude-Institut, Germany


 

 

Imprint

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