Plenary Speakers


  • Debdeep Jena, Cornell University
    Do 2D crystals really offer anything NEW for electronics or photonics?
  • Yong-Hee Lee, KAIST
    Very Small Semiconductor Lasers
  • Heike Riel, IBM Research
    III-V Semiconducting Nanostructures on Si. What are they good for?
  • Martin Straßburg, Osram-Licht AG
    LED: State of the art and upcoming trends


Preliminary List of Invited Speakers


  • Fabrizio Arciprete, University of Rome Tor Vergata, Italy:
    Van der Waals Epitaxy of 2D Materials
  • Maria-Carmen Asensio, Synchroton Soleil, France:
    Electronic Band Structure Investigations of Various 2D Materials/van der Waals Heterostructures Using Synchrotron-based Techniques (e.g. nanoARPES)
  • Moritz Baier, Fraunhofer HHI, Germany:
    TxRx InP PIC Integration Platform on Semi-Insulating Substrate
  • Paul Blom, Max Planck Institute Mainz, Germany:
    Degradation of Polymer light-emitting Diodes
  • Jochen Brill, BASF SE, Germany:
    Direct Photo-Patterning and High Mobility Materials for Flexible OTFTs
  • Andy Carter, Teledyne Scientific & Imaging, USA:
    InP Transistor-Scale Heterogeneous Integration
  • Srabanti Chowdhury, UC Davis, USA:
    Diamond-based Power Electronics
  • Jürgen Christen, Otto-von-Guericke University Magdeburg, Germany:
    Characterization Using High-Resolution TEM-CL
  • Gerald Deboy, Infineon, Germany:
    Silicon versus GaN versus SiC based power devices—comparison of key parameters with respect to use in power electronics
  • Shizuo Fujita, Kyoto University, Japan:
    Oxide Semiconductors by Green Growth Technology for Green Innovation
  • Zbigniew Galazka, Leibniz Institut für Kristallzüchtung, Germany:
    Beta-Ga2O2 Bulk Crystal Growth for Wide-Bandgap Electronics and Optoelectronics
  • Marianne Germain, EpiGaN nv, Belgium:
    AlGaN/GaN Epitaxy on Large Silicon Substrates
  • Jim Greer, Tyndall National Institute, Ireland:
    Transport in Nanowire Structures
  • Alex Hamilton, University of New South Wales, Australia:
    Spintronics with Holes in III-V Semiconductor Structures
  • Bernd Heinemann, IHP, Germany:
    High frequency SiGe HBTs for Communication, Radar and Imaging
  • Thomas Ihn, ETH Zürich, Switzerland
    Topological Insulator Phase in InAs/GaSb Coupled Quantum Wells
  • Bharat Jalan, University of Minnesota, USA:
    Band-Engineered Complex Oxide Interfaces
  • Tsunenobu Kimoto, Kyoto University, Japan:
    Progress and Future Challenges of SiC Material and Power Devices
  • Kazuaki Kiyota, Furukawa Electric Co., Ltd., Japan:
    High Power and Narrow Linewidth Tunable Lasers for Coherent Transmission
  • Ferdinand Kuemmeth, Niels Bohr Institut, Denmark:
    Majorana Modes in Semiconductor Nanowires
  • Arnulf Leuther, Fraunhofer IAF, Germany:
    InGaAs mHEMT Technology for High-Resolution Radar, Imaging and Communication
  • Erik Lind, Lund University, Sweden:
    III-V Nanowire RF MOSFETs
  • Huiyun Liu, University College London, UK:
    III-V Quantum-Dot Lasers Monolithically Grown on Silicon
  • Kozo Makiyama, Fujitsu, Japan:
    GaN HEMT Device Technology for W-Band Power Amplifiers
  • Shinji Matsuo, NTT Lab, Japan:
    Heterogeneously Integrated Photonic-Crystal Lasers on Si
  • Yasumitsu Miyata, Tokyo Metropolitan University, Japan:
    Semiconductor Heterojunctions Based on 2D Materials
  • Daniel Neumaier, AMO GmbH, Germany:
    Graphene-Based High-Frequency Electronics
  • Takeyoshi Onuma, Kogakuin University, Japan:
    Optical Properties of Ga2O3 Films and Crystals
  • Siddharth Rajan, Ohio State, USA:
    Polarization Engineering for Vertical-Current-Transport-Type Nitride-Based Devices
  • Armando Rastelli, Universität Linz, Austria:
    Highly Entangled Photons with Quantum Dot Devices
  • Günther Roelkens, Uni Gent, Belgium:
    III-V-on-silicon Photonic Integrated Circuits for Communication and Sensing Applications
  • Zlatko Sitar, North Carolina State University, USA:
    UV Laser Diodes
  • Kimberley Dick Thelander, Lund University, Sweden:
    III-V Nanowire Growth: Controlling Crystallographic Phases and In-Situ TEM Studies of Growth
  • Karl Unterrainer, Technische Universität Wien, Austria:
    THz Quantum Cascade Lasers
  • Grace Xing, Cornell University, USA:
    Thin-TFETs, Tunneling Field Effect Transistors for High- Efficiency Logic Electronics
  • Li Xiuling, University of Illinois Urbana-Champaign, USA:
    In-plane Nanowire Transistors
  • Guoqiang Zhang, NTT Basic Research Lab, Japan:
    Au-free InP/InAs heterostructure nanowires
  • Yuhao Zhang, MIT – Massachusetts Institute of Technology, USA:
    Vertical High-Voltage GaN Pin Diodes on Si


Paul-Drude-Institut (PDI) für Festkörperelektronik
Leibniz-Institut im Forschungsverbund Berlin e.V
Hausvogteiplatz 5-7
10117 Berlin
Tel. +49 30 20377-481
Fax. +49 30 20377-515
E-Mail: info@csw2017.org

Leibniz Gemeinschaft Logo


Copyright © 2016 based on Timber HTML Template.