Conference Chair : Henning Riechert Paul-Drude-Institut, Berlin
Program Chair : Martin Walther Fraunhofer IAF, Freiburg
Speakers
Plenary Speakers
Debdeep Jena, Cornell University
Do 2D crystals really offer anything NEW for electronics or photonics?
Yong-Hee Lee, KAIST
Very Small Semiconductor Lasers
Heike Riel, IBM Research
III-V Semiconducting Nanostructures on Si. What are they good for?
Martin Straßburg, Osram-Licht AG
LED: State of the art and upcoming trends
Preliminary List of Invited Speakers
Fabrizio Arciprete, University of Rome Tor Vergata, Italy:
Van der Waals Epitaxy of 2D Materials
Maria-Carmen Asensio, Synchroton Soleil, France:
Electronic Band Structure Investigations of Various 2D Materials/van der Waals Heterostructures Using Synchrotron-based Techniques (e.g. nanoARPES)
Moritz Baier, Fraunhofer HHI, Germany:
TxRx InP PIC Integration Platform on Semi-Insulating Substrate
Paul Blom, Max Planck Institute Mainz, Germany:
Degradation of Polymer light-emitting Diodes
Jochen Brill, BASF SE, Germany:
Direct Photo-Patterning and High Mobility Materials for Flexible OTFTs
Srabanti Chowdhury, UC Davis, USA:
Diamond-based Power Electronics
Jürgen Christen, Otto-von-Guericke University Magdeburg, Germany:
Characterization Using High-Resolution TEM-CL
Gerald Deboy, Infineon, Germany: Silicon versus GaN versus SiC based power devices—comparison of key parameters with respect to use in power electronics
Shizuo Fujita, Kyoto University, Japan:
Oxide Semiconductors by Green Growth Technology for Green Innovation
Zbigniew Galazka, Leibniz Institut für Kristallzüchtung, Germany:
Beta-Ga2O2 Bulk Crystal Growth for Wide-Bandgap Electronics and Optoelectronics
Marianne Germain, EpiGaN nv, Belgium:
AlGaN/GaN Epitaxy on Large Silicon Substrates
Jim Greer, Tyndall National Institute, Ireland:
Transport in Nanowire Structures
Alex Hamilton, University of New South Wales, Australia:
Spintronics with Holes in III-V Semiconductor Structures
Bernd Heinemann, IHP, Germany:
High frequency SiGe HBTs for Communication, Radar and Imaging
Thomas Ihn, ETH Zürich, Switzerland
Topological Insulator Phase in InAs/GaSb Coupled Quantum Wells
Bharat Jalan, University of Minnesota, USA:
Band-Engineered Complex Oxide Interfaces
Tsunenobu Kimoto, Kyoto University, Japan: Progress and Future Challenges of SiC Material and Power Devices
Kazuaki Kiyota, Furukawa Electric Co., Ltd., Japan:
High Power and Narrow Linewidth Tunable Lasers for Coherent Transmission
Ferdinand Kuemmeth, Niels Bohr Institut, Denmark: Majorana Modes in Semiconductor Nanowires
Arnulf Leuther, Fraunhofer IAF, Germany:
InGaAs mHEMT Technology for High-Resolution Radar, Imaging and Communication
Erik Lind, Lund University, Sweden:
III-V Nanowire RF MOSFETs
Huiyun Liu, University College London, UK:
III-V Quantum-Dot Lasers Monolithically Grown on Silicon
Kozo Makiyama, Fujitsu, Japan:
GaN HEMT Device Technology for W-Band Power Amplifiers
Shinji Matsuo, NTT Lab, Japan:
Heterogeneously Integrated Photonic-Crystal Lasers on Si
Yasumitsu Miyata, Tokyo Metropolitan University, Japan:
Semiconductor Heterojunctions Based on 2D Materials
Daniel Neumaier, AMO GmbH, Germany:
Graphene-Based High-Frequency Electronics
Takeyoshi Onuma, Kogakuin University, Japan:
Optical Properties of Ga2O3 Films and Crystals